• Home
  • Download PDF
  • Order CD-ROM
  • Order in Print

Home > Ordnance Documents and other related manuals > > Alloy or FusedAlloy.
Figure 76. Yhe PN junction Diode.
PN Junction Operation.

Electronic Principles
Page Navigation
  108    109    110    111    112  113  114    115    116    117    118  

ELECTRONIC PRINCIPLES - OD1647 - LESSON 1/TASK 2
different techniques will be discussed briefly in the following
paragraphs.
(1) Grown. In this method of manufacture, P­type and N­type
impurities are mixed into a single crystal. By so doing, a P­
region is grown over part of a semiconductor's length and an N­
region is grown over the other part. This is called a GROWN
junction and is illustrated in figure 77, view A.
(2) Alloy or Fused­Alloy. In this method, an impurity of one
type is melted into a semiconductor of another type impurity.
For example, a pellet of acceptor impurity is placed on a wafer
of N­type germanium and heated. Under controlled temperature
conditions, the acceptor impurity fuses into the wafer to form a
P­region within it, as shown in view B of figure 77. This type
of junction is known as an ALLOY or FUSED­ALLOW junction and is
one of the most commonly used junctions.
FIGURE 77. GROWN AND FUSED PN JUNCTIONS.
(3) Point­Contact. Figure 78 on the following page shown a
POINT­CONTACT type of construction. It consists of a fine metal
wire, called a cat whisker, that makes contact with a small
amount of a N­type semiconductor as shown in view A of figure
78. The PN union is formed in this process by momentarily
applying a high­surge current to the wire and the N­type
semiconductor. The heat
112






Western Governors University

< Previous Page
Index ^
Next Page >

Privacy Statement
Press Release
Contact

© Copyright Integrated Publishing, Inc.. All Rights Reserved. Design by Strategico.